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Publication Citation: Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness

NIST Authors in Bold

Author(s): Xiaoxiao Zhu; Qiliang Li; D. E. Ioannou; H Gu; Helmut Baumgart; John E. Bonevich; John S. Suehle; Curt A. Richter;
Title: Silicon Nanowire Nonvolatile-Memory with Varying HfO2 Charge Trapping Layer Thickness
Published: December 09, 2009
Abstract:
Pages: 30 pp.
Research Areas: Nanoelectronics and Nanoscale Electronics