Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||L C. Teague; Oana Jurchescu; Curt A. Richter; Sanker Subramanian; John E. Anthony; Thomas Jackson; David J. Gundlach; James Kushmerick;|
|Title:||Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy|
|Published:||May 01, 2010|
|Abstract:||We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.|
|Citation:||Applied Physics Letters|
|Research Areas:||Electron microscopy (EM, TEM, SEM, STEM)|