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Publication Citation: Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy

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Author(s): L C. Teague; Oana Jurchescu; Curt A. Richter; Sanker Subramanian; John E. Anthony; Thomas Jackson; David J. Gundlach; James Kushmerick;
Title: Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy
Published: May 01, 2010
Abstract: We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
Citation: Applied Physics Letters
Volume: 96
Pages: 3 pp.
Research Areas: Electron microscopy (EM, TEM, SEM, STEM)