| Author(s): |
L C. Teague; Oana Jurchescu; Curt A. Richter; Sanker Subramanian; John E. Anthony; Thomas Jackson; David J. Gundlach; James Kushmerick; |
| Title: |
Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy |
| Published: |
May 01, 2010 |
| Abstract: |
We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged. |
| Citation: |
Applied Physics Letters |
| Volume: |
96 |
| Pages: |
3 pp. |
| Research Areas: |
Electron microscopy (EM, TEM, SEM, STEM) |
