Akturk, A.
, Holloway, M.
, Potbhare, S.
, Gundlach, D.
, Li, B.
, Goldsman, N.
, Peckerar, M.
and Cheung, K.
(2010),
Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907042
(Accessed April 18, 2024)
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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation
Published
Author(s)
Akin Akturk, M. Holloway, S. Potbhare, , B Li, Neil Goldsman, M Peckerar,
Abstract
We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and simulated temperature-dependent current voltage characteristics of 0.16- and 0.18-μm bulk MOSFETs.Citation
IEEE Transactions on Electron Devices
Volume
57
Issue
6
Pub Type
Journals
Download Paper
Citation
Created May 31, 2010, Updated October 14, 2021