Cheung, K.
(2010),
Defect depth profiling in gate dielectrics
(Accessed May 1, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Defect depth profiling in gate dielectrics
Published
Author(s)
Abstract
Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods avaliable for gate dielectric defect depth profiling. The valididty of these techniques are controversial. This paper addresss many of the points involved in the debate from basic physics prospective.Pub Type
Talks
Keywords
gate dielectric, defects, CMOS
Citation
Created September 29, 2010, Updated February 19, 2017