| Author(s): |
Lei Chen; Vincent K. Luciani; Houxun H. Miao; |
| Title: |
Effect of Alternating Ar and SF6/C4F8 Gas Flow in Si Nano-Structure Plasma Etching |
| Published: |
August 01, 2011 |
| Abstract: |
Si is very reactive to normal plasma etchants such as fluorine based chemicals and the reactions are inherently isotropic. To fabricate small and/or high aspect ratio nanoscale structures in Si, anisotropic profile is necessary. SF6 combined with C4F8 has been demonstrated as a good gas combination for anisotropic Si etching [6]. In this study, Ar gas was introduced into the etching chamber to improve Si etching rate. In addition to mix Ar with F etching gases directly, an alternating Ar and F gas flow process was proposed. It is interesting to see that the Si etching profile, etching rate and etching selectivity are all improved by alternating Ar bombardment and SF6/C4F8 etching steps. The Si etching rate is determined by the Ar treatment step in alternating Ar and F two step process. |
| Citation: |
Microelectronic Engineering |
| Volume: |
88 |
| Issue: |
8 |
| Pages: |
pp. 2470 - 2473 |
| Keywords: |
Plasma, Etching, Silicon |
| Research Areas: |
Etch |
| PDF version: |
 Click here to retrieve PDF version of paper (397KB) |
