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|Author(s):||B P. Gorman; A G. Norman; R Lukic-Zrnic; T D. Golding; Anthony Birdwell; Christopher Littler;|
|Title:||Atomic Ordering Induced Energy Gap Reductions in GaAsSb Epilayers|
|Published:||March 01, 2005|
|Abstract:||A series of GaAs1-xSbx epilayers (0.51≪x≪0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111)A, (001) -8° toward (111)B, (115)A, (115)B, (113)A, and (113)B were investigated using temperature-dependent Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by FTIR absorption and corroborated by superlattice reflections in electron diffraction. Contrary to previous investigations of ordering in III-V alloys, a marked energy-gap reduction, corresponding to CuPt-B-type ordering, is observed in the GaAs1-xSbx grown on (111)A-type substrate offcuts.|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 063701-1 - 063701-7|
|Research Areas:||Semiconductor Materials|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|