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|Author(s):||Nanying Yang; Tam H. Duong; Jeong-O Jeong; Jose M. Ortiz; Allen R. Hefner Jr.; Kathleen Meehan;|
|Title:||Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes|
|Published:||June 24, 2010|
|Abstract:||This paper presents an automated parameter extraction software tool developed for constructing Silicon (Si) and Silicon Carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models in Synopsys Saber and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development. To verify the accuracy of DIMPACT, the extracted model parameter sets are incorporated into Saber to compare model predictions with measured static and transient diode characteristics. In this paper, the DIMPACT parameter extraction results are demonstrated for a 45 V, 15 A Si Schottky diode, a 600 V, 200 A Si PiN diode, a 10 kV, 5 A SiC JBS diode, and a 10 kV, 20 A SiC PiN diode. The validation results indicate that the model parameters extracted using DIMPACT are accurate.|
|Conference:||IEEE COMPEL 2010|
|Proceedings:||Proceedings of the IEEE COMPEL Workshop 2010|
|Dates:||June 28-30, 2010|
|Keywords:||Power diodes, SiC, parameter extraction|
|Research Areas:||Electronics & Telecommunications, Electric Power Metrology, Energy Conversion, Storage, and Transport|
|PDF version:||Click here to retrieve PDF version of paper (700KB)|