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Publication Citation: Measurement of residual stress field anisotropy at indentations in silicon

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Author(s): Yvonne B. Gerbig; Stephan J. Stranick; Robert F. Cook;
Title: Measurement of residual stress field anisotropy at indentations in silicon
Published: June 23, 2010
Abstract: The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry, that can be related to the number and type of the active {111}<110> slip systems for diamond cubic Si. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes.
Citation: Scripta Materialia
Volume: 63
Pages: pp. 512 - 515
Keywords: nanoindentation; Raman spectroscopy; silicon; residual stresses; crystallographic orientation
Research Areas: Nanomechanics, Semiconductor Materials, Raman, Microelectromechanical systems (MEMS)
PDF version: PDF Document Click here to retrieve PDF version of paper (517KB)