| Author(s): |
Yvonne B. Gerbig; Stephan J. Stranick; Robert F. Cook; |
| Title: |
Measurement of residual stress field anisotropy at indentations in silicon |
| Published: |
June 23, 2010 |
| Abstract: |
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific symmetry, that can be related to the number and type of the active {111}<110> slip systems for diamond cubic Si. Residual compressive stress is concentrated in lobes oriented along the projection onto the indented plane of the activated slip plane normal and tensile stress regions are arranged alternating with the compressive stress lobes. |
| Citation: |
Scripta Materialia |
| Volume: |
63 |
| Pages: |
pp. 512 - 515 |
| Keywords: |
nanoindentation; Raman spectroscopy; silicon; residual stresses; crystallographic orientation |
| Research Areas: |
Nanomechanics, Semiconductor Materials, Raman, Microelectromechanical systems (MEMS) |
| PDF version: |
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