| Author(s): |
Brad Conrad; Calvin Chan; Marsha A. Loth; John E. Anthony; David J. Gundlach; |
| Title: |
Characterization of Soluble Anthradithiophene Derivatives |
| Published: |
March 18, 2010 |
| Abstract: |
We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^{7}$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_ {2}$ displaying a mobility >0.002 cm$^{2}$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives. |
| Pages: |
30 pp. |
| Research Areas: |
Condensed Matter Physics, Characterization, Physics, Characterization, Nanometrology, and Nanoscale Measurements |
