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Publication Citation: Characterization of Soluble Anthradithiophene Derivatives

NIST Authors in Bold

Author(s): Brad Conrad; Calvin Chan; Marsha A. Loth; John E. Anthony; David J. Gundlach;
Title: Characterization of Soluble Anthradithiophene Derivatives
Published: March 18, 2010
Abstract: We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^{7}$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_ {2}$ displaying a mobility >0.002 cm$^{2}$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives.
Pages: 30 pp.
Research Areas: Condensed Matter Physics, Characterization, Physics, Characterization, Nanometrology, and Nanoscale Measurements