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|Author(s):||David L. Miller; Kevin Kubista; Gregory M. Rutter; Ming Ruan; Walt A. de Heer; Phillip First; Joseph A. Stroscio;|
|Title:||Structural analysis of multilayer graphene via atomic moiré interferometry|
|Published:||March 24, 2010|
|Abstract:||The rotation of stacked honeycomb lattices produces an observable moir e pattern in the topography of scanning tunneling microscopy images, which have long been observed in highly-oriented pyrolytic graphite due to rotation of the surface layer relative to layers below. Here, we observe the combined e ect of three-layer moir e patterns in graphene grown on SiC(000 1). Small angle rotations between the first and third layer are shown to produce a double-moir e pattern, resulting from the beat frequencies of interfering moir e patterns of the first three layers. Additionally, unconventional patterns are also observed due to relative lattice strain between the layers. We model the moir e patterns as a beating of the mismatched reciprocal lattice vectors and show how moir e patterns can be used to determine the relative strain between lattices.|
|Citation:||Physical Review B|
|Keywords:||graphene,silicon carbide,scanning tunneling microscopy|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|
|PDF version:||Click here to retrieve PDF version of paper (576KB)|