| Author(s): |
David L. Miller; Kevin Kubista; Gregory M. Rutter; Ming Ruan; Walt A. de Heer; Phillip First; Joseph A. Stroscio; |
| Title: |
Structural analysis of multilayer graphene via atomic moiré interferometry |
| Published: |
March 24, 2010 |
| Abstract: |
The rotation of stacked honeycomb lattices produces an observable moir e pattern in the topography of scanning tunneling microscopy images, which have long been observed in highly-oriented pyrolytic graphite due to rotation of the surface layer relative to layers below. Here, we observe the combined e ect of three-layer moir e patterns in graphene grown on SiC(000 1). Small angle rotations between the first and third layer are shown to produce a double-moir e pattern, resulting from the beat frequencies of interfering moir e patterns of the first three layers. Additionally, unconventional patterns are also observed due to relative lattice strain between the layers. We model the moir e patterns as a beating of the mismatched reciprocal lattice vectors and show how moir e patterns can be used to determine the relative strain between lattices. |
| Citation: |
Physical Review B |
| Volume: |
81 |
| Pages: |
6 pp. |
| Keywords: |
graphene;silicon carbide;scanning tunneling microscopy |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
| PDF version: |
 Click here to retrieve PDF version of paper (562KB) |
