Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Joseph A. Stroscio; Walt A. de Heer; Phillip First; Claire Berger; Thomas Seyller; Jeong-Sun Moon;|
|Title:||Epitaxial Graphenes on Silicon Carbide|
|Published:||April 01, 2010|
|Abstract:||The materials science of graphene grown epitaxially on the hexagonal basal planes of SiC crystals is reviewed. We show that the growth of epitaxial graphene on Si-terminated SiC is much different than growth on the C-terminated SiC surface, and discuss the physical structure of these graphenes. The unique electronic structure and transport properties of each type of epitaxial graphene is described, as well as progress toward the development of epitaxial graphene devices. This materials system is rich in subtleties, and graphene grown on the two polar faces differs in important ways, but all of the salient features of ideal graphene are found in these epitaxial graphenes, and wafer-scale fabrication of multi-GHz devices already has been achieved.|
|Citation:||Materials Research Bulletin|
|Pages:||pp. 296 - 305|
|Keywords:||graphene, epitaxial graphene, silicon carbide, carbon electronics|
|Research Areas:||Nanoelectronics and Nanoscale Electronics|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|