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Publication Citation: Controlled nucleation of GaN nanowires grown with molecular beam epitaxy

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Author(s): Kristine A. Bertness; Aric W. Sanders; Devin M. Rourke; Todd E. Harvey; Alexana Roshko; Norman A. Sanford;
Title: Controlled nucleation of GaN nanowires grown with molecular beam epitaxy
Published: July 13, 2010
Abstract: The location of GaN nanowires was controlled with essentially perfect selectivity using patterned SiNx prior to molecular beam epitaxy growth. Growth was uniform within mask openings and absent on the mask surface for over 95 % of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires were controlled by the size of the mask openings. Openings approximately 400 nm or less produced single nanowires with symmetrically faceted tips.
Citation: Nano Letters
Pages: pp. 2911 - 2915
Keywords: gallium nitride; nanowire; selective epitaxy
Research Areas: Nanowires, Nanotechnology
PDF version: PDF Document Click here to retrieve PDF version of paper (382KB)