NIST logo

Publication Citation: Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling

NIST Authors in Bold

Author(s): Qiliang Li; Xiaoxiao Zhu; D. Ioannou; John S. Suehle; Curt A. Richter;
Title: Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling
Published: June 24, 2009
Abstract:
Conference: 2009 Device Research Conference
Proceedings: 2009 Device Research Conference Technical Digest
Pages: pp. 113 - 114
Location: University Park, PA
Dates: June 22-24, 2009
Research Areas: Semiconductor Materials