| Author(s): |
Gregory M. Rutter; N Guisinger; Jason Crain; Phillip N. First; Joseph A. Stroscio; |
| Title: |
Edge structure of epitaxial graphene islands |
| Published: |
June 07, 2010 |
| Abstract: |
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1X1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration. |
| Citation: |
Physical Review B |
| Volume: |
81 |
| Pages: |
4 pp. |
| Keywords: |
Graphene; Epitaxial Graphene; scanning tunneling microscopy |
| Research Areas: |
Nanoelectronics and Nanoscale Electronics |
| PDF version: |
 Click here to retrieve PDF version of paper (741KB) |
