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Publication Citation: Edge structure of epitaxial graphene islands

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Author(s): Gregory M. Rutter; N Guisinger; Jason Crain; Phillip N. First; Joseph A. Stroscio;
Title: Edge structure of epitaxial graphene islands
Published: June 07, 2010
Abstract: Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1X1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.
Citation: Physical Review B
Volume: 81
Pages: 4 pp.
Keywords: Graphene; Epitaxial Graphene; scanning tunneling microscopy
Research Areas: Nanoelectronics and Nanoscale Electronics
PDF version: PDF Document Click here to retrieve PDF version of paper (759KB)