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Publication Citation: High-Voltage Capacitance Measurement System for SiC Power MOSFETs

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Author(s): Parrish Ralston; Tam H. Duong; Nanying Yang; David W. Berning; Colleen E. Hood; Allen R. Hefner Jr.; Kathleen Meehan;
Title: High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Published: September 24, 2009
Abstract: Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform and record high-voltage capacitance versus voltage measurements on these devices. This paper describes measurement apparatus that safely and accurately allows high voltage capacitance voltage (CV) measurements to be performed. The measurements are based on conventional LCR meter CV techniques but with added circuitry to interface the LCR meter to high voltage bias sources. The effects of the added circuitry are studied theoretically and the CV measurement accuracy is verified with experimentation. High voltage capacitance voltage measurements are presented for both silicon and SiC power MOSFETs.
Conference: IEEE Energy Conversion Congress and Exposition (ECCE)
Proceedings: 2009 IEEE Energy Conversion Congress and Exposition
Pages: 8 pp.
Location: San Jose, CA
Dates: September 20-24, 2009
Keywords: Capacitance, CoolMOSTM, CV measurement, high-voltage, LCR meter, power MOSFET, silicon carbide
Research Areas: Electronics & Telecommunications, Characterization
PDF version: PDF Document Click here to retrieve PDF version of paper (647KB)