Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||Parrish Ralston; Tam H. Duong; Nanying Yang; David W. Berning; Colleen E. Hood; Allen R. Hefner Jr.; Kathleen Meehan;|
|Title:||High-Voltage Capacitance Measurement System for SiC Power MOSFETs|
|Published:||September 24, 2009|
|Abstract:||Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform and record high-voltage capacitance versus voltage measurements on these devices. This paper describes measurement apparatus that safely and accurately allows high voltage capacitance voltage (CV) measurements to be performed. The measurements are based on conventional LCR meter CV techniques but with added circuitry to interface the LCR meter to high voltage bias sources. The effects of the added circuitry are studied theoretically and the CV measurement accuracy is verified with experimentation. High voltage capacitance voltage measurements are presented for both silicon and SiC power MOSFETs.|
|Conference:||IEEE Energy Conversion Congress and Exposition (ECCE)|
|Proceedings:||2009 IEEE Energy Conversion Congress and Exposition|
|Location:||San Jose, CA|
|Dates:||September 20-24, 2009|
|Keywords:||Capacitance, CoolMOSTM, CV measurement, high-voltage, LCR meter, power MOSFET, silicon carbide|
|Research Areas:||Electronics & Telecommunications, Characterization|
|PDF version:||Click here to retrieve PDF version of paper (647KB)|