| Author(s): |
Thomas M. Wallis; Dazhen Gu; Atif Imtiaz; Pavel Kabos; Paul T. Blanchard; Norman A. Sanford; Kristine A. Bertness; Christpher Smith; |
| Title: |
Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz |
| Published: |
July 01, 2011 |
| Abstract: |
The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. High-frequency measurements provide sensitivity to changes in the electrical reactance of the devices that is not available via DC measurements. A two-port microwave network model was developed and was used to extract microwave circuit parameters in the photoconductive and dark states. The change in self-inductance of the device after exposure to ultraviolet radiation corresponded to an increase in the effective radius of the conduction channel by a factor of 1.54. |
| Citation: |
Nanotechnology |
| Volume: |
10 |
| Issue: |
4 |
| Pages: |
pp. 832 - 838 |
| Keywords: |
coplanar waveguide (CPW), CaN nanowires, microwaves, photoconductivity, tow-port measurements. |
| Research Areas: |
Micro, Nanometrology, Nanowires, Nanomaterials, Nanotechnology, Electromagnetics |
| PDF version: |
 Click here to retrieve PDF version of paper (1MB) |
