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|Author(s):||Thomas M. Wallis; Dazhen Gu; Atif A. Imtiaz; Pavel Kabos; Paul T. Blanchard; Norman A. Sanford; Kristine A. Bertness; Christpher Smith;|
|Title:||Electrical Characterization of Photoconductive GaN Nanowire Devices from 50 MHz to 33 GHz|
|Published:||July 01, 2011|
|Abstract:||The electrical response of two-port., photoconductive GaN nanowire devices was measured from 50 MHz to 33 GHz. The admittance of individual contacted nanowires showed an increase on the order of 10% throughout the measured frequency range after exposure to steady ultraviolet illumination. High-frequency measurements provide sensitivity to changes in the electrical reactance of the devices that is not available via DC measurements. A two-port microwave network model was developed and was used to extract microwave circuit parameters in the photoconductive and dark states. The change in self-inductance of the device after exposure to ultraviolet radiation corresponded to an increase in the effective radius of the conduction channel by a factor of 1.54.|
|Pages:||pp. 832 - 838|
|Keywords:||coplanar waveguide (CPW), CaN nanowires, microwaves, photoconductivity, tow-port measurements.|
|Research Areas:||Micro, Nanometrology, Nanowires, Nanomaterials, Nanotechnology, Electromagnetics|
|PDF version:||Click here to retrieve PDF version of paper (1MB)|