Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||David I. Olaya; Paul D. Dresselhaus; Samuel P. Benz;|
|Title:||Versatile co-sputtered Nb/NbxSi1-x/Nb Josephson junctions for Josephson voltage standards and high-speed superconducting digital electronics|
|Published:||June 16, 2009|
|Abstract:||Josephson junctions that use co-sputtered amorphous Nb-Si barriers can be made with a wide variety of electrical properties depending on both the thickness of the barrier and its ratio of Nb to Si. Critical current density (Jc), specific capacitance (Cs), and normal resistance (Rn) can be reliably selected within wide ranges by choosing both the barrier thickness and the Nb concentration. Metallic barriers near the metal-insulator transition are ideal for Josephson voltage standards as they have relatively high IcRn products (where Ic is the critical current) and are non-hysteretic and highly reproducible. More insulating junctions, with thinner barriers have IcRn products greater than 1 mV and Jc values up to 60 kA/cm2 may be useful for superconductive digital electronics. Recent improvements to our deposition system have allowed us to obtain higher values of Jc and better uniformity across the wafer.|
|Conference:||International Superconductive Electronics Conference|
|Proceedings:||International Superconductive Electronics Conference - Extended Abstracts|
|Dates:||June 15-19, 2009|
|Keywords:||voltage standard, Josephson junctions, superconductive electronics|
|Research Areas:||Quantum Electrical Measurements, Superconducting Electronics|
|PDF version:||Click here to retrieve PDF version of paper (89KB)|