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|Author(s):||J. J. Brown; A. I. Baca; Kristine A. Bertness; D. A. Dikin; R. S. Ruoff; Victor M. Bright;|
|Title:||Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages|
|Published:||April 18, 2010|
|Abstract:||This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be about 200 GPa, and some nanowire specimens demonstrated more than 4% elongation or greater than 6 GPa maximum engineering stress before failure. Failure modes included clamp failure, nanowire c-plane fractures, and insufficient force from the MEMS test actuator.|
|Citation:||Sensors and Actuators A-Physical|
|Pages:||pp. 177 - 186|
|Keywords:||Tensile loading, gallium nitride, nanowire, single crystal, mechanical testing, MEMS|
|Research Areas:||Semiconductors, Nanowires, Nanotechnology, Optoelectronics|