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Publication Citation: Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

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Author(s): J. J. Brown; A. I. Baca; Kristine A. Bertness; D. A. Dikin; R. S. Ruoff; Victor M. Bright;
Title: Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Published: April 18, 2010
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be about 200 GPa, and some nanowire specimens demonstrated more than 4% elongation or greater than 6 GPa maximum engineering stress before failure. Failure modes included clamp failure, nanowire c-plane fractures, and insufficient force from the MEMS test actuator.
Citation: Sensors and Actuators A-Physical
Pages: pp. 177 - 186
Keywords: Tensile loading; gallium nitride; nanowire; single crystal; mechanical testing; MEMS
Research Areas: Nanowires, Semiconductors, Nanotechnology, Optoelectronics