| Author(s): |
J. J. Brown; A. I. Baca; Kristine A. Bertness; D. A. Dikin; R. S. Ruoff; Victor M. Bright; |
| Title: |
Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages |
| Published: |
April 18, 2010 |
| Abstract: |
This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures using dielectrophoresis-driven self-assembly and Pt-C clamps created using a gallium focused ion beam. The nanowire modulus of elasticity is measured to be about 200 GPa, and some nanowire specimens demonstrated more than 4% elongation or greater than 6 GPa maximum engineering stress before failure. Failure modes included clamp failure, nanowire c-plane fractures, and insufficient force from the MEMS test actuator. |
| Citation: |
Sensors and Actuators A-Physical |
| Pages: |
pp. 177 - 186 |
| Keywords: |
Tensile loading; gallium nitride; nanowire; single crystal; mechanical testing; MEMS |
| Research Areas: |
Nanowires, Semiconductors, Nanotechnology, Optoelectronics |
