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|Author(s):||Kyung Joong Kim; David S. Simons; John G. Gillen;|
|Title:||Quantitative Depth Profiling of an Alternating Pt/Co Multilayer and a Pt Co Alloy multilayer by SIMS using a Buckminsterfullerene (C60) Source|
|Published:||May 15, 2007|
|Abstract:||Buckmins erfullerene ion beam has been applied o he dep h profiling of an al erna ing pure P and pure Co mul ilayer. Quan i a ive dep h profiling was performed by secondary ion mass spec rome ry (SIMS) wi h C60 ions using P Co alloy films wi h differen composi ions. Rela ive sensi ivi y fac ors (RSFs) derived from a P 39Co61 alloy film were used o conver an original dep h profile o a composi ion dep h profile. A severe in erface ar ifac observed in he dep h profile of a P /Co mul ilayer was quan i a ively correla ed wi h a gradual varia ion of ma rix composi ion hrough he P /Co and Co/P in erfaces by comparison wi h he dep h profiling of an alloy mul ilayer film. Moreover, he in erface ar ifac could be compensa ed by conversion of he profile o a composi ion profile using he same RSFs. The dep h resolu ions of a P /Co mul ilayer derived from he composi ion dep h profile were much larger han he apparen in erface wid hs measured from he original dep h profile due o he nonlinear rela ionship be ween he Co and P ion in ensi ies and heir composi ions.|
|Citation:||Applied Surface Science|
|Pages:||pp. 6000 - 6005|
|Keywords:||Buckminsterfullerene ion, SIMS quantification, Depth profiling, Interface artifact|
|Research Areas:||Nanotechnology, Chemistry|