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|Author(s):||Robert F. Cook; Yvonne B. Gerbig; Mark D. Vaudin; Jeroen Schoenmaker; Stephan J. Stranick;|
|Title:||Stress-Intensity Factor and Toughness Measurement at the Nanoscale using Confocal Raman Microscopy|
|Published:||July 12, 2009|
|Abstract:||A confocal Raman microscopy technique is presented that allows stress measurement at the nanoscale, which in turn enables measurement of stress-intensity factors (SIF) at crack tips and thus toughness to be estimated. Peak-fitting and super-resolution techniques enable stress resolution of approximately 20 MPa at spatial resolution of approximately 100 nm. Micro- and nano-indentation and crack field stress distributions are measured and compared with analytical expressions. The SIF for indentation cracks in Si is shown to be in the range 0.2 MPa m1/2 to 0.4 MPa m1/2, consistent with chipping-induced indentation stress relief and the toughness of Si.|
|Proceedings:||12th International Conference on Fracture|
|Dates:||July 12-17, 2009|
|PDF version:||Click here to retrieve PDF version of paper (168KB)|