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Publication Citation: Channel Hot-Carrier Effect of 4H-SiC MOSFET

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Author(s): Liangchun (. Yu; Kin P. Cheung; John S. Suehle; Jason P. Campbell; Kuang Sheng; Aivars Lelis; Sei-Hyung Ryu;
Title: Channel Hot-Carrier Effect of 4H-SiC MOSFET
Published: March 02, 2009
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.
Citation: Materials Science Forum
Pages: pp. 813 - 816
Keywords: channel hot-carrier effect, MOSFET, 4H-SiC
Research Areas: Semiconductors
PDF version: PDF Document Click here to retrieve PDF version of paper (815KB)