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|Author(s):||Liangchun (. Yu; Kin P. Cheung; John S. Suehle; Jason P. Campbell; Kuang Sheng; Aivars Lelis; Sei-Hyung Ryu;|
|Title:||Channel Hot-Carrier Effect of 4H-SiC MOSFET|
|Published:||March 02, 2009|
|Abstract:||SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.|
|Citation:||Materials Science Forum|
|Pages:||pp. 813 - 816|
|Keywords:||channel hot-carrier effect, MOSFET, 4H-SiC|
|PDF version:||Click here to retrieve PDF version of paper (815KB)|