| Author(s): |
Liangchun Yu; Kin P. Cheung; John S. Suehle; Jason P. Campbell; Kuang Sheng; Aivars Lelis; Sei-Hyung Ryu; |
| Title: |
Channel Hot-Carrier Effect of 4H-SiC MOSFET |
| Published: |
March 02, 2009 |
| Abstract: |
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect. |
| Citation: |
Materials Science Forum |
| Pages: |
pp. 813 - 816 |
| Keywords: |
channel hot-carrier effect, MOSFET, 4H-SiC |
| Research Areas: |
Semiconductors |
| PDF version: |
 Click here to retrieve PDF version of paper (796KB) |
