Yu, L.
, Cheung, K.
, Suehle, J.
, Campbell, J.
, Sheng, K.
, Lelis, A.
and Ryu, S.
(2009),
Channel Hot-Carrier Effect of 4H-SiC MOSFET, Materials Science Forum, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=900181
(Accessed April 16, 2024)
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Channel Hot-Carrier Effect of 4H-SiC MOSFET
Published
Author(s)
, , , , Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.Citation
Materials Science Forum
Pub Type
Others
Download Paper
Keywords
channel hot-carrier effect, MOSFET, 4H-SiC
Citation
Created March 2, 2009, Updated February 19, 2017