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Publication Citation: Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films

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Author(s): Igor Levin; Susan Trolier-McKinstry; Michael D. Biegalski; Junling Wang; Alexei A. Belik; E. Takayama-Muromachi;
Title: Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films
Published: August 15, 2008
Abstract: Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films retain all principal structural features of high-pressure bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell. Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~30) with low loss tangents (<1% at low fields); no maxima were observed over the temperature range of -200 and +350°C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.
Citation: Journal of Applied Physics
Volume: 104
Issue: 4
Keywords: bismuth scandate; distortions; electron microscopy; perovskite
Research Areas: Ceramics
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