| Author(s): |
Igor Levin; Susan Trolier-McKinstry; Michael D. Biegalski; Junling Wang; Alexei A. Belik; E. Takayama-Muromachi; |
| Title: |
Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films |
| Published: |
August 15, 2008 |
| Abstract: |
Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films retain all principal structural features of high-pressure bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell. Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~30) with low loss tangents (<1% at low fields); no maxima were observed over the temperature range of -200 and +350°C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films. |
| Citation: |
Journal of Applied Physics |
| Volume: |
104 |
| Issue: |
4 |
| Keywords: |
bismuth scandate; distortions; electron microscopy; perovskite |
| Research Areas: |
Ceramics |
| PDF version: |
 Click here to retrieve PDF version of paper (874KB) |
