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|Author(s):||Igor Levin; Susan Trolier-McKinstry; Michael D. Biegalski; Junling Wang; Alexei A. Belik; E. Takayama-Muromachi;|
|Title:||Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films|
|Published:||August 15, 2008|
|Abstract:||Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films retain all principal structural features of high-pressure bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell. Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~30) with low loss tangents (<1% at low fields); no maxima were observed over the temperature range of -200 and +350°C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.|
|Citation:||Journal of Applied Physics|
|Keywords:||bismuth scandate, distortions, electron microscopy, perovskite|
|PDF version:||Click here to retrieve PDF version of paper (895KB)|