NIST logo

Publication Citation: The Impact of the Dielectric / Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors

NIST Authors in Bold

Author(s): Youngsuk Jung; Regis J. Kline; Eric K. Lin; Daniel A. Fischer; Michael F. Toney; Martin Heeney; Iain McCulloch; Dean M. DeLongchamp;
Title: The Impact of the Dielectric / Semiconductor Interface on Microstructure and Charge Carrier Transport in High-Performance Polythiophene Transistors
Published: May 14, 2008
Abstract: The performance of organic field-effect transistors (OFETs) significantly depends on the properties of the interface between the semiconductor and gate dielectric. Here, we study the impact of chemically modified and morphologically controlled dielectrics on the performance of poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) semiconductors. We find that the molecular packing, domain size, and carrier mobility of pBTTT are highly sensitive to dielectric chemistry, dielectic roughness, and gating configuration. The large and well-oriented terraced domains that are the origin of pBTTT's high performance can develop well on certain dielectrics, but can be disrupted on others.
Citation: Electrochemical Society Transactions
Pages: 9 pp.
Keywords: dielectric;diffraction;NEXAFS;organic transistor;semiconducting polymer
Research Areas: Polymers
PDF version: PDF Document Click here to retrieve PDF version of paper (352KB)