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|Author(s):||Kwang-Woo Choi; Vivek M. Prabhu; Kristopher Lavery; Eric K. Lin; Wen-Li Wu; John T. Woodward IV; Michael Leeson; H Cao; Manish Chandhok; George Thompson;|
|Title:||Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist|
|Published:||February 25, 2007|
|Abstract:||Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and processing steps for EUV photoresist specific problems such as high photoacid generator (PAG) loadings and the use of very thin films. Furthermore, new processing strategies such as changes in the developer strength and composition may enable increased resolution. In this work, model photoresists are used to investigate the influence of photoacid generator loading and developer strength effects on EUV lithographically printed images. Measurements of line width roughness and developed line-space patterns were performed.|
|Conference:||SPIE Advanced Lithography|
|Proceedings:||Proceedings of SPIE|
|Location:||San Jose, CA|
|Dates:||February 25-March 2, 2007|
|Keywords:||chemically amplified phoresists,diffusion,neutron reflectivity,photolithographty,swelling|
|PDF version:||Click here to retrieve PDF version of paper (2MB)|