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Publication Citation: Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist

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Author(s): Kwang-Woo Choi; Vivek M. Prabhu; Kristopher Lavery; Eric K. Lin; Wen-Li Wu; John T. Woodward IV; Michael Leeson; H Cao; Manish Chandhok; George Thompson;
Title: Effect of Photoacid Generator Concentration and Developer Strength on the Patterning Capabilities of a Model EUV Photoresist
Published: February 25, 2007
Abstract: Current extreme ultraviolet (EUV) photoresist materials do not yet meet requirements on exposure-dose sensitivity, line-width roughness (LWR), and resolution. Fundamental studies are required to quantify the trade-offs in materials properties and processing steps for EUV photoresist specific problems such as high photoacid generator (PAG) loadings and the use of very thin films. Furthermore, new processing strategies such as changes in the developer strength and composition may enable increased resolution. In this work, model photoresists are used to investigate the influence of photoacid generator loading and developer strength effects on EUV lithographically printed images. Measurements of line width roughness and developed line-space patterns were performed.
Conference: SPIE Advanced Lithography
Proceedings: Proceedings of SPIE
Volume: 6519
Pages: 9 pp.
Location: San Jose, CA
Dates: February 25-March 2, 2007
Keywords: chemically amplified phoresists;diffusion;neutron reflectivity;photolithographty;swelling
Research Areas: Polymers
PDF version: PDF Document Click here to retrieve PDF version of paper (2MB)