| Author(s): |
T Zheleva; Aivars Lelis; G Duscher; F Liu; Igor Levin; M Das; |
| Title: |
Nature of Transition Layers at the SiO2/SiC Interface |
| Published: |
July 14, 2008 |
| Abstract: |
Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry of these interfaces in the thermally grown SiO2/4H-SiC heterostructures using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially-resolved electron energy loss spectroscopy. The analyses revealed presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to a formation the ternary Si-C-O phase during thermal annealing. |
| Citation: |
Applied Physics Letters |
| Volume: |
93 |
| Issue: |
2 |
| Keywords: |
electron energy loss spectroscopy;interfaces;silicon carbide;silicon oxide;transmission electron microscopy |
| Research Areas: |
Characterization, Ceramics |
