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Publication Citation: Nature of Transition Layers at the SiO2/SiC Interface

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Author(s): T Zheleva; Aivars Lelis; G Duscher; F Liu; Igor Levin; M Das;
Title: Nature of Transition Layers at the SiO2/SiC Interface
Published: July 14, 2008
Abstract: Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry of these interfaces in the thermally grown SiO2/4H-SiC heterostructures using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially-resolved electron energy loss spectroscopy. The analyses revealed presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to a formation the ternary Si-C-O phase during thermal annealing.
Citation: Applied Physics Letters
Volume: 93
Issue: 2
Keywords: electron energy loss spectroscopy;interfaces;silicon carbide;silicon oxide;transmission electron microscopy
Research Areas: Characterization, Ceramics