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|Author(s):||T Zheleva; Aivars Lelis; G Duscher; F Liu; Igor Levin; M Das;|
|Title:||Nature of Transition Layers at the SiO2/SiC Interface|
|Published:||July 14, 2008|
|Abstract:||Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry of these interfaces in the thermally grown SiO2/4H-SiC heterostructures using high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, and spatially-resolved electron energy loss spectroscopy. The analyses revealed presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to a formation the ternary Si-C-O phase during thermal annealing.|
|Citation:||Applied Physics Letters|
|Keywords:||electron energy loss spectroscopy,interfaces,silicon carbide,silicon oxide,transmission electron microscopy|
|Research Areas:||Ceramics, Characterization|