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|Author(s):||J.H. Yang; Julia Slutsker; Igor Levin; D H. Kim; Chang-Beom Eom; R Ramesh; Alexander L. Roytburd;|
|Title:||Engineering of Self-Assembled Domain Architectures With Ultra-High Piezoelectric Response in Epitaxial Ferroelectric Films|
|Abstract:||Non-180 domain wall movement, which makes a large contribution to the piezoelectric response of ferroelectric bulk materials, were found to be much more difficult in epitaxial films, because of substrate clamping and inter-domain pinning. Through theoretical calculations and experimental studies we show that by choosing the film composition on the morphortropic phase boundary, it is possible to form a mobile , 2-domain architecture in an epitaxial PbZrxTi1-xO3 film with a (101) orientation. Transmission electron microscopy, X-ray diffraction analysis, and atomic force microscopy revealed that the (101) films feature a self-assembled polydomain structure, consisting of two domain sets of a tetragonal phase. Experiment results on the (101) films exhibits a reversible longitudinal strain as high as 0.35% under applied ac electric fields of ~30kV/cm, corresponding to an effective piezoelectric coefficient on the order of 1,000 pm/V. This result suggests an optimized design of ferroelectric thin film heterostructures for better electromechanical performance.|
|Citation:||Advanced Functional Materials|
|Research Areas:||Characterization, Ceramics|