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|Author(s):||J H. Edgar; Lawrence H. Robins; S E. Coatney; L Liu; J Chaudhuri; K Ignatiev; Z J. Rek;|
|Title:||A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide|
|Published:||January 01, 2000|
|Abstract:||The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure.|
|Conference:||International Conference on Silicon Carbide and Related Materials|
|Proceedings:||Proceedings of the International Conference on Silicon Carbide and Related Materials 1999|
|Pages:||pp. 1599 - 1602|
|Dates:||September 28, 1999|
|Keywords:||bulk crystal growth,cathodoluminescence,Raman spectroscopy,x-ray topography|
|Research Areas:||Semiconductor Materials|