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Publication Citation: A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide

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Author(s): J H. Edgar; Lawrence H. Robins; S E. Coatney; L Liu; J Chaudhuri; K Ignatiev; Z J. Rek;
Title: A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide
Published: January 01, 2000
Abstract: The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure.
Conference: International Conference on Silicon Carbide and Related Materials
Proceedings: Proceedings of the International Conference on Silicon Carbide and Related Materials 1999
Volume: 338-342
Pages: pp. 1599 - 1602
Dates: September 28, 1999
Keywords: bulk crystal growth;cathodoluminescence;Raman spectroscopy;x-ray topography
Research Areas: Semiconductor Materials