| Author(s): |
J H. Edgar; Lawrence H. Robins; S E. Coatney; L Liu; J Chaudhuri; K Ignatiev; Z J. Rek; |
| Title: |
A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide |
| Published: |
January 01, 2000 |
| Abstract: |
The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Needles and platelets freely and randomly nucleated on the crucible wall exhibited near-band-edge luminescence, narrow Raman peak widths, and a relatively low dislocation density. In contrast, thick films deposited on on-axis, (0001) 6H-silicon carbide wafers exhibited luminescence only at 3.5 eV, had much broader Raman peak widths, and a mosaic crystal structure. |
| Conference: |
International Conference on Silicon Carbide and Related Materials |
| Proceedings: |
Proceedings of the International Conference on Silicon Carbide and Related Materials 1999 |
| Volume: |
338-342 |
| Pages: |
pp. 1599 - 1602 |
| Dates: |
September 28, 1999 |
| Keywords: |
bulk crystal growth;cathodoluminescence;Raman spectroscopy;x-ray topography |
| Research Areas: |
Semiconductor Materials |
