Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Optics for Extreme Ultraviolet Lithography

NIST Authors in Bold

Author(s): Steven E. Grantham; Charles S. Tarrio; Shannon B. Hill; Thomas B. Lucatorto;
Title: Optics for Extreme Ultraviolet Lithography
Published: Date Unknown
Abstract: Extreme Ultraviolet Lithography (EUVL) is considered by many to be the next generation lithography that will fabricate integrated circuits in the next decade. Although EUVL is conceptually similar to optical or deep-UV lithography, it represents a major paradigm shift in the optical system. For example the sources under consideration are not lasers but are plasma-based radiators emitting a broad spectrum including 13.5 nm radiation which is used for the imaging process. Because 13.5 nm is well into the vacuum ultraviolet, the projection optics are not lenses but multilayered mirrors capable of reflecting about 70% of this radiation at near-normal incidence. The mirrors used must have exceptional figure accuracy. Multilayer coatings must add minimal figure errors and also must maintain their reflectivity for years under the harsh conditions of a production environment that includes ionizing radiation, water vapor and hydrocarbons. In this paper we discuss the various at-wavelength metrology challenges and will outline techniques used to measure the reflectivity and endurance of optics for use in EUVL systems.
Citation: Laser Focus World
Keywords: extreme ultraviolet lithography,extreme ultraviolet optics,multilayer mirrors
Research Areas: