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|Author(s):||Lucile C. Teague; Behrang H. Hamadani; John E. Anthony; David J. Gundlach; James G. Kushmerick; Sanker Subramanian; Thomas Jackson; Curt A. Richter; Oana Jurchescu;|
|Title:||Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors|
|Published:||December 02, 2008|
|Abstract:||We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device performance. In these devices charge transport is limited by the structure and interaction of the diF-TESADT grains within the active portion of the device rather than by the electrical contacts between the organic semiconductor and the source and drain electrodes.|
|Pages:||pp. 4513 - 4516|
|Research Areas:||Nanotechnology, Nanoelectronics and Nanoscale Electronics|
|PDF version:||Click here to retrieve PDF version of paper (352KB)|