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|Author(s):||David S. Simons;|
|Title:||Summary of ISO/TC 201 Standard: XIII. ISO 18114:2003 - Surface Chemical Analysis - Secondary Ion Mass Spectrometry - Determination of Relative Sensitivity Factors From Ion-Implanted Reference Materials|
|Published:||March 01, 2006|
|Abstract:||Ion-implanted materials are commonly used in secondary-ion mass spectrometry for the calibration of instruments. This international Standard was prepared to provide a uniform method for determining the relative sensitivity factor (RSF) of an element in a specified matrix from an ion-implanted reference material, and to show how the concentration of the element in a different sample of the same matrix material can be determined. In this standard, terms are defined and a formula is given for calculating an isotopic RSF for a particular element-matrix combination from a SIMS depth profile of an ion-implanted external standard. Options are provided for cycle-by-cycle normalization to a matrix reference species or normalization to a single average value of a matrix signal. Another formula is given for using this RSF to quantify the concentration of the same element as a function of depth in a different sample of the same matrix material. Requirements of ion-implanted reference materials for use with this method are specified, as are the contents of a test report when an RSF is determined by this method.|
|Citation:||Surface and Interface Analysis|
|Keywords:||ion implantation,reference material,relative sinsitivity factor,RSF,SIMS|
|Research Areas:||Nanotechnology, Chemistry|