Development and Application of Multiple Δ-Layer Reference Materials for Semiconductor Analysis

Published

January 1, 2005

Author(s)

K J. Kim, D Moon, P Chi, David S. Simons

Abstract

The rapid progress in the semiconductor industry requires more precise in-depth profiling analysis of doping elements in narrower and shallower regions. Secondary ion mass spectrometry (SIMS) is the most popular technique for the depth distribution of doping elements within 20 nm shallow junctions. Multiple delta-layers (MDL) were developed by ion beam sputter deposition to enhance the analysis capability of SIMS depth profiling. These MDLs can be used to evaluate SIMS depth resolution, to calibrate the depth scale and to monitor sputtering uniformity. Another possible application is as a consistency check of the calibration of stylus profilometers for measurement of sputter depth. Craters with 3 different depths were formed by sputtering with a Cs ion beam. The crater depths measured by a stylus profilometer were compared with the certified thickness of the reference material measured by high resolution TEM.

Citation

Surface and Interface Analysis

Pub Type

Journals

Keywords

arsenic, boron, delta-layer, silicon, SIMS, sputter deposition, TEM

Citation

Kim, K. , Moon, D. , Chi, P. and Simons, D. (2005), Development and Application of Multiple Δ-Layer Reference Materials for Semiconductor Analysis, Surface and Interface Analysis (Accessed April 25, 2024)