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|Author(s):||Terrence J. Jach; Joseph A. Dura; Nhan V. Nguyen; J R. Swider; G Cappello; Curt A. Richter;|
|Title:||Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm|
|Published:||January 01, 2004|
|Abstract:||We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed.|
|Citation:||Surface and Interface Analysis|
|Keywords:||ellipsometry,GIXPS,grazing angles,neutron reflectometry,neutrons,reflectometry,silicon,silicon dioxide,x-rays|