| Author(s): |
Terrence J. Jach; Joseph A. Dura; Nhan V. Nguyen; J R. Swider; G Cappello; Curt A. Richter; |
| Title: |
Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm |
| Published: |
January 01, 2004 |
| Abstract: |
We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed. |
| Citation: |
Surface and Interface Analysis |
| Volume: |
36 |
| Issue: |
No. 1 |
| Keywords: |
ellipsometry;GIXPS;grazing angles;neutron reflectometry;neutrons;reflectometry;silicon;silicon dioxide;x-rays |
| Research Areas: |
Chemistry |
