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Publication Citation: Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm

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Author(s): Terrence J. Jach; Joseph A. Dura; Nhan V. Nguyen; J R. Swider; G Cappello; Curt A. Richter;
Title: Comparative Thickness Measurements of SiO2/Si Films for Thickness Less than 10 nm
Published: January 01, 2004
Abstract: We report on a comparative measurement of SiO2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were characterized by XPS with grazing incidence x-rays at 1.8 keV, with cold neutron reflectometry (λ I = 0.475 nm), and with spectroscopic ellipsometry over 1.5 eV < E < 6.0 eV. The results show good agreement between the ellipsometry and the grazing incidence XPS, with slightly lower values for the neutron reflectometry. The effects of surface contamination are discussed.
Citation: Surface and Interface Analysis
Volume: 36
Issue: No. 1
Keywords: ellipsometry;GIXPS;grazing angles;neutron reflectometry;neutrons;reflectometry;silicon;silicon dioxide;x-rays
Research Areas: Chemistry