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Publication Citation: P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

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Author(s): David S. Simons; P Chi; S L. Rommel; T E. Dillon; K D. Hobart; P E. Thompson; P R. Berger;
Title: P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy
Published: January 01, 2001
Abstract: Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.
Citation: Journal of Vacuum Science and Technology B
Volume: 19
Issue: No. 1
Keywords: antimony;boron;MBE;peak-to-valley current ratio;segregation;silicon;SIMS;surface
Research Areas: Nanotechnology, Chemistry