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|Author(s):||David S. Simons; P Chi; S L. Rommel; T E. Dillon; K D. Hobart; P E. Thompson; P R. Berger;|
|Title:||P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy|
|Published:||January 01, 2001|
|Abstract:||Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.|
|Citation:||Journal of Vacuum Science and Technology B|
|Keywords:||antimony,boron,MBE,peak-to-valley current ratio,segregation,silicon,SIMS,surface|
|Research Areas:||Nanotechnology, Chemistry|