| Author(s): |
David S. Simons; P Chi; S L. Rommel; T E. Dillon; K D. Hobart; P E. Thompson; P R. Berger; |
| Title: |
P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy |
| Published: |
January 01, 2001 |
| Abstract: |
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer. |
| Citation: |
Journal of Vacuum Science and Technology B |
| Volume: |
19 |
| Issue: |
No. 1 |
| Keywords: |
antimony;boron;MBE;peak-to-valley current ratio;segregation;silicon;SIMS;surface |
| Research Areas: |
Nanotechnology, Chemistry |
