NIST logo

Publication Citation: Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy

NIST Authors in Bold

Author(s): P E. Thompson; K D. Hobart; M E. Twigg; G Jernigan; T E. Dillon; S L. Rommel; P R. Berger; David S. Simons; P Chi; R Lake; A C. Seabaugh;
Title: Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy
Published: August 01, 1999
Abstract: Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.
Citation: Applied Physics Letters
Volume: 75
Pages: pp. 1308 - 1310
Keywords: antimony;boron;delta doping;Esaki diode;negative differential resistance;rapid thermal anneal;secondary ion
Research Areas: Nanotechnology, Chemistry