| Author(s): |
P E. Thompson; K D. Hobart; M E. Twigg; G Jernigan; T E. Dillon; S L. Rommel; P R. Berger; David S. Simons; P Chi; R Lake; A C. Seabaugh; |
| Title: |
Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy |
| Published: |
August 01, 1999 |
| Abstract: |
Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration. |
| Citation: |
Applied Physics Letters |
| Volume: |
75 |
| Pages: |
pp. 1308 - 1310 |
| Keywords: |
antimony;boron;delta doping;Esaki diode;negative differential resistance;rapid thermal anneal;secondary ion |
| Research Areas: |
Nanotechnology, Chemistry |
