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|Author(s):||P E. Thompson; K D. Hobart; M E. Twigg; G Jernigan; T E. Dillon; S L. Rommel; P R. Berger; David S. Simons; P Chi; R Lake; A C. Seabaugh;|
|Title:||Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy|
|Published:||August 01, 1999|
|Abstract:||Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 1308 - 1310|
|Keywords:||antimony,boron,delta doping,Esaki diode,negative differential resistance,rapid thermal anneal,secondary ion|
|Research Areas:||Nanotechnology, Chemistry|