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NIST Authors in Bold
|Author(s):||V W. Tsai; Theodore V. Vorburger; Ronald G. Dixson; Joseph Fu; R Koning; Richard M. Silver; E. C. Williams;|
|Title:||The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST|
|Published:||January 01, 1998|
|Abstract:||Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice constant of silicon, have considerable potential as a AFM calibration artifact at the sub-nanometer range. A metrology AFM developed at NIST, called the calibrated AFM (C-AFM), is used to measure this type of surface. In this paper, the results of six sets of measurements made over a period of five months are presented. The calculation of the step algorithm and the uncertainty of the measurement are introduced and discussed briefly.|
|Conference:||International Conference on Characterization and Metrology for ULSI Technology|
|Proceedings:||1998 International Conference on Characterization and Metrology for ULSI Technology|
|Dates:||April 28, 1998|
|Keywords:||calibration,SPM Metrology,step height|
|Research Areas:||Manufacturing, Metrology|