| Author(s): |
Ulf Griesmann; Quandou Wang; T D. Raymond; |
| Title: |
Optical Flatness Metrology for 300 mm Silicon Wafers |
| Published: |
April 01, 2005 |
| Abstract: |
At the National Institute of Standards and Technology (NIST), we are developing two interferometric methods for measuring the thickness variation and flatness of free-standing and chucked silicon wafers with diameters up to 300mm. The eXtremely accurate CALIBration InterferometeR (XCALIBIR) is a precision phase measuring interferometer with an operating vacelength of 633nm and a test beam of 300 mm diameter. XCALIBIR is used to evaluate the flatness of chucked wafers. NIST''s infrared interferometer (IR2) is a phase measuring interferometer that operates at 1.55um and is used to measure the thickness variation of free-standing 300 mm silicon wafers. |
| Conference: |
American Institute of Physics Conference on Characterization and Metrology for ULSI Technology |
| Proceedings: |
American Institute of Physics Proceedings of the 2005 Conference on Characterization and Metrology for ULSI Technology |
| Volume: |
788 |
| Pages: |
pp. 599 - 603 |
| Location: |
Dallas, TX |
| Dates: |
March 15-28, 2005 |
| Keywords: |
300mm silicon wafers;wafer flatness;wafer thickness variation (TTV and GBIR) |
| Research Areas: |
Nanomanufacturing |
| PDF version: |
 Click here to retrieve PDF version of paper (519KB) |
