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|Author(s):||F S. Chien; W F. Hsieh; S Gwo; Andras Vladar; John A. Dagata;|
|Title:||Silicon Nanostructures Fabricated by Scanning Probe Oxidation and Tetramethyl Ammonium Hydroxide Etching|
|Published:||June 15, 2002|
|Abstract:||Fabrication of silicon nanostructures is a key technique for the development of monolithically integrated optoelectronic circuits. We demonstrate that the process of scanning probe lithography (SPL) and anisotropic TMAH etching is a low-cost and reliable method to produce smooth and uniform silicon nanostructures on a variety of silicon substrates. Etched structures with a pitch of 100 nm, positive- and negative-contrast structures, and features height greater than 100 nm have been produced on bare silicon, Si3N4-coated and silicon-on-insulator wafers. Evolution of hexagonal pits on two-dimensional grid structures are shown to depend on the pattern spacing and orientation with respect to (110)-silicon crystal directions. We successfully combined SPL with traditional optical lithography in a mixed, multilevel patterning method for realizing micrometer- and nanometer-scale feature sizes, as required for photonic device designs. The process of SPL + TMAH etching is a promising approach to rapid prototyping of functional nano-pholonic devices.|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 10044 - 10050|
|Keywords:||anisotropic etching,nanostructures,optoelectronics,scanning probe microscopy|
|Research Areas:||Manufacturing, Metrology|