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Publication Citation: Evaluation of Scanning Maxwell-Stress Microscopy for SPM-Based Nanoelectronics

NIST Authors in Bold

Author(s): John A. Dagata;
Title: Evaluation of Scanning Maxwell-Stress Microscopy for SPM-Based Nanoelectronics
Published: September 01, 1997
Abstract: A preliminary evaluation of the compatibility, spatial resolution, and sensitivity of scanning Maxwell-stress microscopy (SMM) as an in situ diagnostic technique for SPM oxidation of silicon is presented. These results indicate that SMM will provide us with a more detailed understanding of the reaction mechanism which occurs in the high field conditions at the tip-sample junction during SPM oxidation. SMM also appears to be a promising technique for simultaneously investigating dimensional and electrical properties of molecular distributions within highly complex micro-environments such as phase-separated polymer systems.
Proceedings: Program of the 4th Industrial Applications of Scanned Probe Microscopy; NIST, Gaithersburg, MD, 1997; and Nanotechnology 8: A3-A9, Special Issue, September 1997
Location: Gaithersburg, MD
Keywords: nanofabrication,phase-separated polymers,scanned probe microscopy,scanning Maxwell-stress microscopy
Research Areas: Metrology, Manufacturing