| Author(s): |
Richard M. Silver; John A. Dagata; H. W. Tseng; |
| Title: |
Delineation of pn Junctions by Scanning Tunneling Microscopy/Spectroscopy in Air and Ultrahigh Vacuum |
| Published: |
May 01, 1995 |
| Abstract: |
Lateral dopant profiling of cleaved, passivated abrupt GaAs pn junctions using scanning tunneling microscopy/spectroscopy is demonstrated both in ultrahigh vacuum and air. A combination of forward-and reverse-bias imaging and position-dependent tunneling spectroscopy makes it possible to delineate the metallurgical junction location of abrupt asymmetric n(+)p and symmetric n(+)p(+) junctions. The experimental results are shown to be consistent with simulations based on the metal-insulator-semiconductor band-bending model when surface states and bulk transport through the pn junction are properly taken into account in the calculations. |
| Citation: |
Journal of Vacuum Science and Technology A |
| Volume: |
13(3) |
| Pages: |
pp. 1705 - 1708 |
| Research Areas: |
Metrology, Manufacturing |
