Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).
NIST Authors in Bold
|Author(s):||John A. Dagata; Joseph J. Kopanski;|
|Title:||Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices|
|Published:||July 01, 1995|
|Abstract:||The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement techniques. Due to their inherent two-dimensional imaging capabilities, high spatial resolution, and the nondestructive nature of the measurement, the evolution of SPM-based characterization tools from lab to fab is now underway. This article examines the current standard of performance for electrical measurements of semiconductor devices and the prospects for the application of SPM as a next generation tool for dopant profiling and defect inspection of device structures.|
|Citation:||Solid State Technology|
|Research Areas:||Manufacturing, Metrology|