NIST logo

Publication Citation: Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices

NIST Authors in Bold

Author(s): John A. Dagata; Joseph J. Kopanski;
Title: Scanned Probe Techniques for the Electrical Characterization of Semiconductor Devices
Published: July 01, 1995
Abstract: The spatial resolution, sensitivity, and accuracy required for electrical characterization of device structures in the semiconductor industry suggest that scanned probe microscopy (SPM) tools may offer an alternative to existing measurement techniques. Due to their inherent two-dimensional imaging capabilities, high spatial resolution, and the nondestructive nature of the measurement, the evolution of SPM-based characterization tools from lab to fab is now underway. This article examines the current standard of performance for electrical measurements of semiconductor devices and the prospects for the application of SPM as a next generation tool for dopant profiling and defect inspection of device structures.
Citation: Solid State Technology
Volume: 38(7)
Research Areas: Metrology, Manufacturing