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|Author(s):||John A. Dagata; O Glembocki; J Tuchman; K Ko; S Pang;|
|Title:||Photoreflectance Study of the Chemically Modified (100) GaAs Surface|
|Published:||May 01, 1994|
|Abstract:||Photoreflectance (PR) spectroscopy has been used to study the Fermi-level pinning position of chemically modified (100) GaAs surfaces. It is shown that there are two pinning positions for the unmodified (100) GaAs surface. For n-GaAs, the Fermi level pins near midgap, while for p-GaAs the Fermi level pins near the valence band. We used an Ar/Cl(2) plasma generated by an electron-cyclotron resonance (ECR) source and P2S5 chemical passivation to change the stoichiometry of the surface. We show that ECR etching makes the surface oxide As rich and that the Fermi-level position for this circumstance is near midgap. The P(2)S(5) passivation produces a thin Ga rich oxide which is observed to pin the Fermi-level near the valence band. These results allow us to relate the Fermi-level pinning position to the stoichiometry of the GaAs/oxide interface.|
|Conference:||Spectroscopic Characterization Techniques for Semiconductor Technology V, Orest J. Glembocki, Editor May 1994, Semiconductor Device Characterization I|
|Proceedings:||Proceedings of SPIE|
|Pages:||pp. 96 - 102|
|Location:||Los Angeles, CA|
|Dates:||January 26, 1994|
|Research Areas:||Manufacturing, Metrology|