| Author(s): |
H. W. Tseng; John A. Dagata; Richard M. Silver; Joseph Fu; J R. Lowney; |
| Title: |
Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions |
| Published: |
September 05, 1993 |
| Abstract: |
Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in-air study of electronic junction contrast. Our results indicate that the STM-delineated junction locations do not coincide with the electrical junction locations, but rather shift into the p-type regions. |
| Citation: |
Journal Vacuum Science Technology B |
| Volume: |
12(1) |
| Pages: |
pp. 373 - 377 |
| Research Areas: |
Metrology, Manufacturing |
