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Publication Citation: Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions

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Author(s): H. W. Tseng; John A. Dagata; Richard M. Silver; Joseph Fu; J R. Lowney;
Title: Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions
Published: September 05, 1993
Abstract: Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in-air study of electronic junction contrast. Our results indicate that the STM-delineated junction locations do not coincide with the electrical junction locations, but rather shift into the p-type regions.
Citation: Journal Vacuum Science Technology B
Volume: 12(1)
Pages: pp. 373 - 377
Research Areas: Metrology, Manufacturing