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|Author(s):||H. W. Tseng; John A. Dagata; Richard M. Silver; Joseph Fu; J R. Lowney;|
|Title:||Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions|
|Published:||September 05, 1993|
|Abstract:||Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in-air study of electronic junction contrast. Our results indicate that the STM-delineated junction locations do not coincide with the electrical junction locations, but rather shift into the p-type regions.|
|Citation:||Journal Vacuum Science Technology B|
|Pages:||pp. 373 - 377|
|Research Areas:||Metrology, Manufacturing|