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Publication Citation: Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide

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Author(s): Richard M. Silver; John A. Dagata; H. W. Tseng;
Title: Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide
Published: November 01, 1994
Abstract: Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar junction theory are described and compared to experiment. These results provide a comprehensive understanding of the interplay between tip-induced and surface-state-induced band-bending effects observed in the tunneling spectra of passivated semiconductor surfaces.
Citation: Journal of Applied Physics
Volume: 76
Pages: pp. 5122 - 5131
Research Areas: Metrology, Manufacturing