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|Author(s):||Richard M. Silver; John A. Dagata; H. W. Tseng;|
|Title:||Ambient and Vacuum Scanning Tunneling Spectroscopy of Sulfur and Oxygen-Terminated Gallium Arsenide|
|Published:||November 01, 1994|
|Abstract:||Tunneling spectroscopy of sulfur- and oxygen-terminated n- and p-type GaAs (110) surfaces is reported for air and ultrahigh-vacuum conditions. Simulations of the complete I-V characteristics with explicit inclusion of surface states within the planar junction theory are described and compared to experiment. These results provide a comprehensive understanding of the interplay between tip-induced and surface-state-induced band-bending effects observed in the tunneling spectra of passivated semiconductor surfaces.|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 5122 - 5131|
|Research Areas:||Metrology, Manufacturing|