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|Author(s):||Michael T. Postek;|
|Title:||Critical Issues in Scanning Electron Microscope Metrology|
|Published:||January 01, 1994|
|Abstract:||During the manufacturing of present-day integrated circuits, certain measurements must be made of the submicrometer structures composing the device with a high degree of repeatability. Optical microscopy, scanning electron microscopy, and the various forms of scanning probe microscopies are major microscopical techniques used for this submicrometer metrology. New techniques applied to scanning electron microscopy have improved some of the limitations of this technique and time will permit even further improvements. This paper reviews the current state of scanning electron microscope (SEM) metrology in light of many of these recent improvements.|
|Citation:||Journal of Research of National Institute of Standards and Technology|
|Pages:||pp. 641 - 671|
|Keywords:||accuracy,backscattered electron,field emission,metrology,scanning electron microscope,secondary electron|
|Research Areas:||Metrology, Manufacturing|