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Publication Citation: Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry

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Author(s): J. Bennett; John A. Dagata;
Title: Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry
Published: January 01, 1994
Abstract: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10?20 nm of material. The utility of TOF-SIMS ultrashallow depth profiling is demonstrated ion GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to UV/ozone treatment.
Citation: Journal of Vacuum Science and Technology B
Volume: 12(1)
Pages: pp. 214 - 218
Research Areas: Metrology, Manufacturing