| Author(s): |
J. Bennett; John A. Dagata; |
| Title: |
Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry |
| Published: |
January 01, 1994 |
| Abstract: |
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10?20 nm of material. The utility of TOF-SIMS ultrashallow depth profiling is demonstrated ion GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to UV/ozone treatment. |
| Citation: |
Journal of Vacuum Science and Technology B |
| Volume: |
12(1) |
| Pages: |
pp. 214 - 218 |
| Research Areas: |
Metrology, Manufacturing |
