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|Author(s):||J. Bennett; John A. Dagata;|
|Title:||Ultrashallow Depth Profiling with Time-of-flight Secondary Ion Mass Spectrometry|
|Published:||January 01, 1994|
|Abstract:||Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 10?20 nm of material. The utility of TOF-SIMS ultrashallow depth profiling is demonstrated ion GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to UV/ozone treatment.|
|Citation:||Journal of Vacuum Science and Technology B|
|Pages:||pp. 214 - 218|
|Research Areas:||Manufacturing, Metrology|