NIST Authors in Bold
| Author(s): | T Monchesky; John Unguris; |
|---|---|
| Title: | Magnetic Properties of Co/GaAs(110) |
| Published: | December 04, 2006 |
| Abstract: | We observed three magnetic states of an ultrathin, atomically well-ordered Co film grown on a cleaved GaAs(110) substrate. For a Co thickness less than 3.4 monolayers (ML), we find a ferromagnetically dead layer associated with the formation of interfacial Co2GaAs. For thicknesses greater than 4.1 ML, the Co film grows with a bcc structure that contains 6 at. % Ga. The films are ferromagnetic with an easy axis along the [110] direction. This magnetic state persists up to a thickness of 7 ML, at which point an abrupt in-plane spin-reorientation transition reorients the magnetization along the [001] direction. |
| Citation: | Physical Review B (Condensed Matter and Materials Physics) |
| Volume: | 74 |
| Issue: | 24 |
| Pages: | pp. 241301-1 - 241301-4 |
| Research Areas: | Nanomagnetics |