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|Author(s):||Tingyong Chen; Yi Ji; C Chien; Mark D. Stiles;|
|Title:||Current-induced switching in a single exchange-biased ferromagnetic layer|
|Published:||May 15, 2005|
|Abstract:||We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin polarized current injected through a point contact. The high resistance of the hysteretic switching is due to formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a new type of spin-transfer torque effect which is the inverse effect of domain wall magnetoresistance. At room temperature, non-hysteretic switching behavior with a broad switching current density range is observed.|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 10C709-1 - 10C709-3|