| Author(s): |
Tingyong Chen; Yi Ji; C Chien; Mark D. Stiles; |
| Title: |
Current-induced switching in a single exchange-biased ferromagnetic layer |
| Published: |
May 15, 2005 |
| Abstract: |
We demonstrate current-induced switching effects in a single exchanged-biased ferromagnetic layer. A nanodomain can be switched within the ferromagnetic layer by a spin polarized current injected through a point contact. The high resistance of the hysteretic switching is due to formation of a domain wall between the nanodomain and the rest of the layer. The switching behavior observed in a single layer is a new type of spin-transfer torque effect which is the inverse effect of domain wall magnetoresistance. At room temperature, non-hysteretic switching behavior with a broad switching current density range is observed. |
| Citation: |
Journal of Applied Physics |
| Volume: |
97 |
| Issue: |
10 |
| Pages: |
pp. 10C709-1 - 10C709-3 |
| Research Areas: |
Nanomagnetics |
