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|Author(s):||S Hill; C Haich; F Dunning; G Walters; Jabez J. McClelland; Robert Celotta; H Craighead;|
|Title:||Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms|
|Published:||April 12, 1999|
|Abstract:||Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.|
|Citation:||Applied Physics Letters|
|Pages:||pp. 2239 - 2241|
|PDF version:||Click here to retrieve PDF version of paper (140KB)|