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Publication Citation: Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms

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Author(s): S Hill; C Haich; F Dunning; G Walters; Jabez J. McClelland; Robert Celotta; H Craighead;
Title: Patterning of Hydrogen-Passivated Si(100) using Ar(3P0,2) Metastable Atoms
Published: April 12, 1999
Abstract: Patterning of silicon by exposing a hydrogen-passivated Si(100) surface to Ar(3P0,2) metastable atoms through a fine grid in the presence of a small backgroundpressure of oxygen is described. Metastable atom impact leads to the formation of a uniform oxide layer that is sufficiently resistant to chemical etching to allowfeature depths > 20 nm to be realized. With optical manipulation of the incident metastable atoms, the technique could provide the basis for massively-parallel nanoscale fabrication on silicon without the use of organic resists.
Citation: Applied Physics Letters
Volume: 74
Issue: 15
Pages: pp. 2239 - 2241
Keywords: ATOM
Research Areas: Nanocomposites
PDF version: PDF Document Click here to retrieve PDF version of paper (140KB)