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Publication Citation: Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(3P0,2) Atoms

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Author(s): Shannon B. Hill; C Haich; F Dunning; G Walters; Jabez J. McClelland; Robert Celotta; H Craighead; J Han; D Tannenbaum;
Title: Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(3P0,2) Atoms
Published: May 01, 1999
Abstract: We report the use of metastable (Ar3P0,2) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, changes in hydrophilicity and XPS analysis. Metastable atom exposuressufficient to uniformily damage the monolayer should allow pattern transfer to the underlying Si (100) substrate following chemical and plasma etching. With opticalmanipulation of the incident metastable atoms, this technique could provide the basis for massively-parallel nanoscale fabrication on silicon.
Citation: Journal of Vacuum Science and Technology B
Volume: 17
Issue: 3
Pages: pp. 1087 - 1089
Keywords: atom lithography; lithography; metastable atoms; octadecylsiloxane; self-assembled nanolayers
Research Areas: Nanofabrication, Nanomanufacturing, and Nanoprocessing
PDF version: PDF Document Click here to retrieve PDF version of paper (568KB)