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|Author(s):||Shannon B. Hill; C Haich; F Dunning; G Walters; Jabez J. McClelland; Robert Celotta; H Craighead; J Han; D Tannenbaum;|
|Title:||Patterning of Octadecylsiloxane Self-assembled Monolayers on Si(100) using Ar(3P0,2) Atoms|
|Published:||May 01, 1999|
|Abstract:||We report the use of metastable (Ar3P0,2) atoms and a physical mask to pattern octadecylsiloxane self-assembled monolayers grown directly onsilicon surfaces. The damage to the monolayer is confirmed using lateral force microscopy, changes in hydrophilicity and XPS analysis. Metastable atom exposuressufficient to uniformily damage the monolayer should allow pattern transfer to the underlying Si (100) substrate following chemical and plasma etching. With opticalmanipulation of the incident metastable atoms, this technique could provide the basis for massively-parallel nanoscale fabrication on silicon.|
|Citation:||Journal of Vacuum Science and Technology B|
|Pages:||pp. 1087 - 1089|
|Keywords:||atom lithography, lithography, metastable atoms, octadecylsiloxane, self-assembled nanolayers|
|Research Areas:||Nanofabrication, Nanomanufacturing, and Nanoprocessing|
|PDF version:||Click here to retrieve PDF version of paper (568KB)|