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|Author(s):||William F. Egelhoff Jr.; P J. Chen; Cedric J. Powell; Mark D. Stiles; Robert D. McMichael;|
|Title:||Growth of GMR Spin Valves using Indium as a Surfactant|
|Published:||January 01, 1996|
|Abstract:||We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from ~0.8 to ~0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5-1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float-out to the surface during deposition of the spin valve leaving the spin-valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 interface can be increased from 12 to 25 mT by the use of thicker In(1.4 nm).|
|Citation:||Journal of Applied Physics|
|Pages:||pp. 2491 - 2496|