Take a sneak peek at the new NIST.gov and let us know what you think!
(Please note: some content may not be complete on the beta site.).

View the beta site
NIST logo

Publication Citation: Growth of GMR Spin Valves using Indium as a Surfactant

NIST Authors in Bold

Author(s): William F. Egelhoff Jr.; P J. Chen; Cedric J. Powell; Mark D. Stiles; Robert D. McMichael;
Title: Growth of GMR Spin Valves using Indium as a Surfactant
Published: January 01, 1996
Abstract: We have investigated the use of In as a surfactant to achieve smoother interfaces in spin-valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The coupling field is reduced from ~0.8 to ~0.3 mT, presumably by suppressing roughness at the Co/Cu/Co interfaces, when 0.5-1.0 nm In is deposited on the first Co film just prior to Cu deposition or on the Cu film just prior to deposition of the second Co film. The In has a strong tendency to float-out to the surface during deposition of the spin valve leaving the spin-valve layers largely intact. The exchange bias at the FeMn/Ni80Fe20 interface can be increased from 12 to 25 mT by the use of thicker In(1.4 nm).
Citation: Journal of Applied Physics
Volume: 79
Issue: 5
Pages: pp. 2491 - 2496
Research Areas: Nanomagnetics